ماسفت IRF840

Description

Technology:     Si
Mounting Style:     Through Hole
Package / Case:     TO-220-3
Number of Channels:     1 Channel
Transistor Polarity:     N-Channel
Vds – Drain-Source Breakdown Voltage:     500 V
Id – Continuous Drain Current:     8 A
Rds On – Drain-Source Resistance:     850 mOhms
Vgs – Gate-Source Voltage:     20 V
Maximum Operating Temperature:     + 150 C
Packaging:     Tube
Channel Mode:     Enhancement
Brand:     Vishay Semiconductors
Configuration:     Single
Fall Time:     20 ns
Height:     9.01 mm
Length:     10.41 mm
Minimum Operating Temperature:     – 55 C
Pd – Power Dissipation:     125 W
Rise Time:     23 ns
Factory Pack Quantity:     1000
Transistor Type:     1 N-Channel
Typical Turn-Off Delay Time:     49 ns
Typical Turn-On Delay Time:     14 ns
Width:     4.7 mm
Unit Weight:     0.211644 oz