ماسفت IRF 610

Description

Case:     TO-220-3
Number of Channels:     1 Channel
Transistor Polarity:     N-Channel
Vds – Drain-Source Breakdown Voltage:     200 V
Id – Continuous Drain Current:     2.3 A
Rds On – Drain-Source Resistance:     1.5 Ohms
Vgs – Gate-Source Voltage:     20 V
Maximum Operating Temperature:     + 175 C
Fall Time:     8.9 ns
Height:     9.01 mm
Length:     10.41 mm
Minimum Operating Temperature:     – 55 C
Pd – Power Dissipation:     36 W
Rise Time:     17 ns
Factory Pack Quantity:     1000
Transistor Type:     1 N-Channel
Typical Turn-Off Delay Time:     14 ns
Typical Turn-On Delay Time:     8.2 ns