توضیحات
Technology: Si
Mounting Style: Through Hole
Package / Case: TO-220-3
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vds – Drain-Source Breakdown Voltage: 500 V
Id – Continuous Drain Current: 8 A
Rds On – Drain-Source Resistance: 850 mOhms
Vgs – Gate-Source Voltage: 20 V
Maximum Operating Temperature: + 150 C
Packaging: Tube
Channel Mode: Enhancement
Brand: Vishay Semiconductors
Configuration: Single
Fall Time: 20 ns
Height: 9.01 mm
Length: 10.41 mm
Minimum Operating Temperature: – 55 C
Pd – Power Dissipation: 125 W
Rise Time: 23 ns
Factory Pack Quantity: 1000
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 49 ns
Typical Turn-On Delay Time: 14 ns
Width: 4.7 mm
Unit Weight: 0.211644 oz
نقد و بررسیها
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